Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

Theory of carrier lifetime in silicon.- Lifetime measurement techniques.- Theory of lifetime spectroscopy.- Defect characterization on intentionally metal-contaminated silicon samples.- The metastable defect in boron-doped Czochralski silicon.- Summary and further work.- Zusammenfassung und Ausblick.

10/99 "Gustav-Mie-Preis" awarded for the diploma thesis by the Faculty of Physics at Albert-Ludwigs-University Freiburg

09/99 - 05/04 PhD thesis in physics at Fraunhofer ISE and University of Konstanz:
"Lifetime spectroscopy as a method of defect characterization in silicon for photovoltaic applications" (overall grade: summa cum laude)

08/95 - 01/97 Undergraduate assistant at Fraunhofer ISE in the area of solar cell
characterization

12/98 - 08/99 Research assistant at Fraunhofer ISE
1. in the department of solar cells - materials - technology
2. in the department of thermal optical systems

06/04 - today Research assistant at Fraunhofer ISE