Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

• Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
• Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability
• Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

1. Introduction 2. SiC Material Properties 3. GaN Material Properties 4. SiC Power Device Design and Fabrication 5. GaN-on-Si Power Device Design and Fabrication 6. GaN-on-GaN Power Device Design and Fabrication 7. Gate Drives for WBG devices 8. Packaging WBG devices 9. Applications of GaN devices 10. Applications of SiC devices 11. Synopsys